Applied Optoelectronics Announces 100Gbps PIN Photodiode Chips
AOI’s high performance 100 Gbps InGaAs PIN PDs are front-side illuminated and feature a high-speed Ground-Signal-Ground (GSG) electrical pad configuration. The devices are designed for operation in the important optical communication wavelength bands between 1270-nm and 1610-nm. In addition to high bandwidth, the devices also are designed to have high responsivity, low capacitance, low dark current, and excellent reliability even in the most demanding application environments. The 100 Gbps PIN PD with 15 µm aperture can achieve receiver sensitivity of -9dBm OMA. Pairing this with AOI’s 100 Gbps PAM4 lasers, the 100 Gbps PIN PD is ideal for applications such as the 100G DR, 100G FR, 400G DR4 and 400G FR4 transceivers, which are used primarily by large datacenter operators to interconnect switches within their datacenters.
“The laser diode and the photodiode are the two critical active optical components in fiber-optic transceivers. With this new 100 Gbps per lambda PIN PD, we are now able to manufacture both of these key components in our in-house fab, which enhances our vertical integration and allows us to better serve our 100G and 400G customers,” commented Dr.
The devices are currently available for sampling, with volume production expected in the second quarter of 2019. For more information, including pricing, please contact the AOI sales team at firstname.lastname@example.org.
Source: Applied Optoelectronics, Inc.